Materials development
We develop band-engineered semiconductor systems by molecular beam epitaxy (MBE) in silicon-germanium, arsenides and antimonides. Currently, we are particularly interested in
- gate-tunable 2D electron or hole systems
- core/shell semiconductor nanowires and quantum wires
- isotopically purified heterostructures (silicon and germanium isotopes)
- hybrid oxide/semiconductor or metal/semiconductor MBE structures
Model systems
We use our heterostructures to then play with the physics of
- spin qubits in silicon (electron spin) and germanium (hole spin)
- all-eletrical control of spin qubits
- electrical g-factor switching in a silicon-germanium environment
- spin-orbit effects and their electric control in semiconductors (arsenides, antimonides)
- nanophotonics and lasing in quantum wires (GaAs/AlGaAs)
- proximity effects at interfaces between semiconductors and superconductors
See also our publications and alumni for recent examples of our work.