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Publications

2024

Atomistic compositional details and their importance for spin qubits in isotope-purified silicon quantum wells

J. Klos, J. Tröger, J. Keutgen, M. P. Losert, H. Riemann, N. V. Abrosimov, J. Knoch, H. Bracht, S. N. Coppersmith, M. Friesen, O. Cojocaru-Mirédin, L. R. Schreiber, and D. Bougeard

Adv. Sci. 11, 2407442 (2024)

Impact of biased cooling on the operation of undoped silicon quantum well field-effect devices for quantum circuit applications

L. K. Diebel, L. G. Zinkl, A. Hötzinger, F. Reichmann, M. Lisker, Y. Yamamoto, and D. Bougeard

arXiv:2408.14844

Sensing dot with high output swing for scalable baseband readout of spin qubits

E. Kammerloher, A. Schmidbauer, L. Diebel, I. Seidler, M. Neul, M. Künne, A. Ludwig, J. Ritzmann, A. Wieck, D. Bougeard, L. R. Schreiber, and H. Bluhm

Phys. Rev. Appl. 22, 024044 (2024)

Local laser-induced solid-phase recrystallization of phosphorus-implanted
Si/SiGe heterostructures for contacts below 4.2 K

M. Neul, I. V. Sprave , L. K. Diebel, L. G. Zinkl, F. Fuchs, Y. Yamamoto,
C. Vedder , D. Bougeard, and L. R. Schreiber

Phys. Rev. Mat. 8, 043801 (2024)

Experimental and theoretical studies on self-diffusion in amorphous germanium

T. Böckendorf, J. Kirschbaum, F. Kipke, D. Bougeard, J. Lundsgaard Hansen, A. Nylandsted Larsen, M. Posselt, and H. Bracht

AIP Adv. 14, 065129 (2024)

Mode-multiplexing deep-strong light-matter coupling

J. Mornhinweg, L. K. Diebel, M. Halbhuber, M. Prager, J. Riepl, T. Inzenhofer, D. Bougeard, R. Huber, and C. Lange

Nat. Commun. 15, 1847 (2024)

Sculpting ultrastrong light–matter coupling through spatial matter structuring

J. Mornhinweg, L. K. Diebel, M. Halbhuber, J. Riepl, E. Cortese, S. De Liberato, D. Bougeard, R. Huber, and C. Lange

Nanophotonics 13, 1909 (2024)

2023

Tailoring potentials by simulation-aided design of gate layouts for spin-qubit
applications

I. Seidler, M. Neul, E. Kammerloher, M. Künner, A. Schmidbauer, L. K. Diebel, A. Ludwig, J. Ritzmann, A. D. Wieck, D. Bougeard, H. Bluhm, and L. R. Schreiber

Phys. Rev. Appl. 20, 044058 (2023)

Controlled rotation of electrically injected spins in a non-ballistic spin field-effect transistor

F. Eberle, D. Schuh, B. Grünewald, D. Bougeard, D. Weiss, and M. Ciorga

Nano Lett. 23, 4815 (2023)

Interfacial Tuning of Anisotropic Gilbert Damping

L. Chen, S. Mankovsky, M. Kronseder, D. Schuh, M. Prager, D. Bougeard, H. Ebert, D. Weiss, and C. H. Back

Phys. Rev. Lett. 130, 046704 (2023)

2022

Wurtzite quantum wires with strong spatial confinement: Polarization anisotropies in single-wire spectroscopy

V. Zeller, N. Mundigl, P. E. Faria Junior, J. Fabian, C. Schüller, and D. Bougeard

Phys. Rev. Appl. 18,  054014 (2022)

Circular polarization immunity of the cyclotron resonance photoconductivity in two-dimensional electron systems

E. Mönch, P. Euringer, G. M. Hüttner, I. A. Dmitriev, D. Schuh, M. Marocko, J. Eroms, D. Bougeard, D. Weiss, and S. D. Ganichev

Phys. Rev. B 106,  L161409 (2022)

Exciton fine structure splitting and linearly polarized emission in strained
transition-metal dichalcogenide monolayers

M. M. Glazov, F. Dirnberger, V. M. Menon, T. Taniguchi, K. Watanabe, D. Bougeard, J. D. Ziegler, and A. Chernikov

Phys. Rev. B 106,  125303 (2022)

Scalable high-repetition-rate sub-half-cycle terahertz pulses from spatially indirect interband transitions

C. Meineke, M. Prager, J. Hayes, Q. Wen, L. Z. Kastner, D. Schuh, K. Fritsch, O. Pronin, M. Stein, F. Schäfer, S. Chatterjee, M. Kira, R. Huber, and D. Bougeard

Light Sci. Appl. 11, 151 (2022)

Retarded boron and phosphorus diffusion in silicon nanopillars due to stress induced vacancy injection

J. K. Prüßing, T. Böckendorf, F. Kipke, J. Xu, P. Puranto, J. Lundsgaard Hansen, D. Bougeard, E. Peiner, and H. Bracht

J. Appl. Phys. 131, 075702 (2022)

2021

Gating of Two-Dimensional Electron Systems in InGaAs/InAlAs Heterostructures: The Role of Intrinsic InAlAs Deep Donor Defects

M. Prager, M. Trottmann, J. Schmidt, L. Ebnet, D. Schuh and D. Bougeard

Phys. Rev. Appl. 16, 064028 (2021)

Intersubband excitations in ultrathin core-shell nanowires in the one-dimensional quantum limit probed by resonant inelastic light scattering

S. Meier, P. E. Faria Junior, F. Haas, E.-S. Heller, F. Dirnberger, V. Zeller, T. Korn, J. Fabian, D. Bougeard and C. Schüller

Phys. Rev. B 104, 235307 (2021)

Quasi-1D exciton channels in strain-engineered 2D materials

F. Dirnberger, J. D. Ziegler, P. E. Faria Junior, R. Bushati, T. Taniguchi, K. Watanabe, J. Fabian, D. Bougeard, A. Chernikov and V. M. Menon

Sci. Adv. 7, eabj3066 (2021)

Robust and fast post-processing of single-shot spin qubit detection events with a neural network

T. Struck, J. Lindner, A. Hollmann, F. Schauer, A. Schmidbauer, D. Bougeard and L. R. Schreiber

Sci. Rep. 11, 16203 (2021)

Diffusive spin transport in narrow two-dimensional electron gas channels

F. Eberle, D. Schuh, D. Bougeard, D. Weiss and M. Ciorga

Phys. Rev. Appl. 16, 014010 (2021)

Superlinear Photogalvanic Effects in (Bi0.3Sb0.7)2(Te0.1Se0.9)3: Probing Three-Dimensional Topological Insulator Surface States at Room Temperature

S. N. Danilov, L. E. Golub, T. Mayer, A. Beer, S. Binder, E. Mönch, J. Minár, M. Kronseder, C. H. Back, D. Bougeard and S. D. Ganichev

Phys. Rev. Appl. 16, 064030 (2021)

Dynamic detection of current-induced spin-orbit magnetic fields

L. Chen, R. Islinger, J. Stigloher, M. M. Decker, M. Kronseder, D. Schuh, D. Bougeard, D. Weiss and C. H. Back

Phys. Rev. B 104, 014425 (2021)

Tailored Subcycle Nonlinearities of Ultrastrong Light-Matter Coupling

J. Mornhinweg, M. Halbhuber, C. Ciuti, D. Bougeard, R. Huber and C. Lange

Phys. Rev. Lett. 126, 177404 (2021)

Transport properties of band engineered p-n heterostructures of epitaxial Bi2Se3/(Bi1-xSbx)2(Te1-ySey)3 topological insulators

T. Mayer, H. Werner, F. Schmid, R. Diaz-Pardo, J. Fujii, I. Vobornik, C.H. Back, M. Kronseder and D. Bougeard

Phys. Rev. Mater. 5, 014202 (2021)

2020

Non-adiabatic stripping of a cavity field from electrons in the deep-strong coupling regime

M. Halbhuber, J. Mornhinweg, V. Zeller, C. Ciuti, D. Bougeard, R. Huber and C. Lange

Nat. Photon. 14, 675–679 (2020)

Closed-loop control of a GaAs-based singlet-triplet spin qubit with 99.5% gate fidelity and low leakage

P. Cerfontaine, T. Botzem, J. Ritzmann, S. S. Humpohl, A. Ludwig, D. Schuh, D. Bougeard, A. D. Wieck and H. Bluhm

Nat. Commun. 11, 4144 (2020)

Low-frequency spin qubit energy splitting noise in highly purified 28Si/SiGe

T. Struck, A. Hollmann, F. Schauer, O. Fedorets, A. Schmidbauer, K. Sawano, H. Riemann, N. V. Abrosimov, L. Cywinski, D. Bougeard, and L. R. Schreiber

npj Quantum Inf. 6, 40 (2020)

Large, Tunable Valley Splitting and Single-Spin Relaxation Mechanisms in a Si/SixGe(1-x) Quantum Dot

A. Hollmann, T. Struck, V. Langrock, A. Schmidbauer, F. Schauer, T. Leonhardt, K. Sawano, H. Riemann, N. V. Abrosimov, D. Bougeard, and L. R. Schreiber

Phys. Rev. Appl. 13, 034068 (2020)

Tunneling mechanism in a (Ga,Mn)As/GaAs-based spin Esaki diode investigated by bias-dependent shot noise measurements

T. Arakawa, J. Shiogai, M. Maeda, M. Ciorga, M. Utz, D. Schuh, Y. Niimi, M. Kohda, J. Nitta, D. Bougeard, D. Weiss, and K. Kobayashi

Phys. Rev. B 102, 045308 (2020)

Observation of Anomalously Strong Penetration of Terahertz Electric Field Through Terahertz-Opaque Gold Films Into a GaAs/AlGaAs Quantum Well

S. D. Ganichev, S. N. Danilov, M. Kronseder, D. Schuh, I. Gronwald, D. Bougeard, E. L. Ivchenko, A. Ya. Shul'man

Journal of Infrared, Millimeter, and Terahertz Waves 41, 957 (2020)

Diffusion of boron in germanium at 800-900 °C revisited

F. Kipke, T. Südkamp, J. K. Prüßing, D. Bougeard, and H. Bracht

J. Appl. Phys. 127, 025703 (2020)

Inelastic light scattering by intrasubband spin-density excitations in GaAs-AlGaAs quantum wells with balanced Bychkov-Rashba and Dresselhaus spin-orbit interaction: Quantitative determination of the spin-orbit field

S. Gelfert, C. Frankerl, C. Reichl, D. Schuh, G. Salis, W. Wegscheider, D. Bougeard, T. Korn, and C. Schüller

Phys. Rev. B 101, 035427 (2020)

2019

Tuning spontaneous emission through waveguide cavity effects in semiconductor nanowires

F. Dirnberger, D. R. Abujetas, J. König, M. Forsch, T. Koller, I. Gronwald, C. Lange, R. Huber, C. Schüller, T. Korn, J. A. Sánchez-Gil, and D. Bougeard

Nano Lett. 19, 7287 (2019)

Ultralong spin lifetimes in one dimensional semiconductor nanowires

F. Dirnberger, M. Kammermeier, J. König, M. Forsch, P. E. Faria Junior, T. Campos, J. Fabian, J. Schliemann, C. Schüller, T. Korn, P. Wenk, and D. Bougeard

Appl. Phys. Lett. 114, 202101 (2019)

Magnetic Force Sensing Using a Self-Assembled Nanowire

N. Rossi, B. Gross, F. Dirnberger, D. Bougeard, and M. Poggio

Nano Lett. 19, 930 (2019)

Quantitative scanning spreading resistance microscopy on n-type dopant diffusion profiles in germanium and the origin of dopant deactivation

J. K. Prüßing, G. Hamdana, D. Bougeard, E. Peiner, and H. Bracht

J. Appl. Phys. 125, 085105 (2019)

2018

Tuning Methods for Semiconductor Spin Qubits

T. Botzem, M. D. Shulman, S. Foletti, S. P. Harvey, O. E. Dial, P. Bethke, P. Cerfontaine, R. P. G. McNeil, D. Mahalu, V. Umansky, A. Ludwig, A. Wieck, D. Schuh, D. Bougeard, A. Yacoby, and H. Bluhm

Phys. Rev. Appl. 10, 054026 (2018)

Spin relaxation in wurtzite nanowires

M. Kammermeier, P. Wenk, F. Dirnberger, D. Bougeard, and J. Schliemann

Phys. Rev. B 98, 035407 (2018)

Asymmetric g Tensor in Low-Symmetry Two-Dimensional Hole Systems

C. Gradl, R. Winkler, M. Kempf, J. Holler, D. Schuh, D. Bougeard, A. Hernández-Mínguez, K. Biermann, P. V. Santos, C. Schüller, and T. Korn

Phys. Rev. X 8, 021068 (2018)

Electric-field control of interfacial spin-orbit fields

L. Chen, M. Gmitra, M. Vogel, R. Islinger, M. Kronseder, D. Schuh, D. Bougeard, J. Fabian, D. Weiss, and C. H. Back

Nat. Electron. 1, 350 (2018)

Emergence of anisotropic Gilbert damping in ultrathin Fe layers on GaAs(001)

L. Chen, S. Mankovsky, S. Wimmer, M. A. W. Schoen, H. S. Körner, M. Kronseder, D. Schuh, D. Bougeard, H. Ebert, D. Weiss, and C. H. Back

Nat. Phys. 14, 490 (2018)

Self-Diffusion in Amorphous Silicon by Local Bond Rearrangements

J. Kirschbaum, T. Teuber, A. Donner, M. Radek, D. Bougeard, R. Böttger, J. Lundsgaard Hansen, A. Nylandsted Larsen, M. Posselt, and H. Bracht

Phys. Rev. Lett. 120, 225902 (2018)

Origin and Manipulation of Stable Vortex Ground States in Permalloy
Nanotubes

M. Zimmermann, T. N. G. Meier, F. Dirnberger, A. Kákay, M. Decker, S. Wintz, S. Finizio, E. Josten, J. Raabe, M. Kronseder, D. Bougeard, J. Lindner, and C. H. Back

Nano Lett. 18, 2828 (2018)

Spatial variation of dynamic nuclear spin polarization probed
by the non-local Hanle effect

J. Shiogai, M. Ciorga, M. Utz, D. Schuh, M. Kohda, D. Bougeard, T. Nojima,
D. Weiss, and J. Nitta

Appl. Phys. Lett. 112, 132403 (2018)

2017

Gate-tunable large magnetoresistance in an all-semiconductor
spin valve device

M. Oltscher, F. Eberle, T. Kuczmik, A. Bayer, D. Schuh, D. Bougeard, M. Ciorga, and D. Weiss

Nat. Commun. 8, 1807 (2017)

Terahertz Light-Matter Interaction beyond Unity Coupling Strength

A. Bayer, M. Pozimski, S. Schambeck, D. Schuh, R. Huber, D. Bougeard, and C. Lange

Nano Lett.17, 6340 (2017)

Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures

M. Radek, B. Liedke, B. Schmidt, M. Voelskow, L. Bischoff , J. L. Hansen, A. N. Larsen, D. Bougeard, R. Böttger, S. Prucnal, M. Posselt, and H. Bracht

Materials 10, 813 (2017)

Magnetoresistance oscillations induced by high-intensity terahertz radiation

T. Herrmann, Z. D. Kvon, I. A. Dmitriev, D. A. Kozlov, B. Jentzsch, M. Schneider, L. Schell, V. V. Belk'ov, A. Bayer, D. Schuh, D. Bougeard, T. Kuczmik, T. Oltscher, D. Weiss, and S. D. Ganichev

Phys. Rev. B 96, 115449 (2017)

Hanle spin precession in a two-dimensional electron system

T. Kuczmik, M. Oltscher, A. Bayer, D. Schuh, D. Bougeard, M. Ciorga, and D. Weiss

Phys. Rev. B 95, 195315 (2017)

Determination of hole g-factor in InAs/InGaAs/InAlAl quantum wells by magneto-photoluminescence studies

Ya. V. Terent'ev, S. N. Danilov, M. V. Durnev, J. Loher, D. Schuh, D. Bougeard, S. V. Ivanov, and S. D. Ganichev

J. Appl. Phys. 121, 053904 (2017)

Optical investigation of electrical spin injection into an inverted two-dimensional electron gas structure

M. Buchner, T. Kuczmik, M. Oltscher, M. Ciorga, T. Korn, J. Loher, D. Schuh, C. Schüller, D. Bougeard, D. Weiss, and C. H. Back

Phys. Rev. B 95, 035304 (2017)

2016

Robust spin-orbit torque and spin-galvanic effect at the Fe/GaAs (001) interface at room temperature

L. Chen, M. Decker, M. Kronseder, R. Islinger, M. Gmitra, D. Schuh, D. Bougeard, J. Fabian, D. Weiss, and C. H. Back

Nat. Commun. 7, 13802 (2016)

Enhanced spin-orbit coupling in core/shell nanowires

S. Furthmeier, F. Dirnberger, M. Gmitra, A. Bayer, M. Forsch, J. Hubmann, C. Schüller, E. Reiger, J. Fabian, T. Korn, and D. Bougeard

Nat. Commun. 7, 12413 (2016)

Anisotropic Polar Magneto-Optic Kerr Effect of Ultrathin Fe/GaAs (001) Layers du to Interfacial Spin-Orbit Interaction

M. Buchner, P. Högl, S. Putz, M. Gmitra, S. Günther, M. A. W. Schoen, M. Kronseder, D. Schuh, D. Bougeard, J. Fabian, and C. H. Back

Phys. Rev. Lett 117, 157202 (2016)

Deterministic transfer of spin polarization in wire-like lateral structures via the persistent spin helix

M. Schwemmer, A. Hanninger, M. Weingartner, M. Oltscher, M. Ciorga, D. Schuh, D. Bougeard, T. Korn, and C. Schüller

Appl. Phys. Lett. 109, 172106 (2016)

Analog of microwave-induced resistance oscillations induced in GaAs heterostructures by terahertz radiation

T. Herrmann, I. A. Dmitriev, D. A. Kozlov, M. Schneider, B. Jentzsch, Z. D. Kvon, P. Olbrich, V. V. Belkov, A. Bayer, D. Schuh, D. Bougeard, T. Kuczmik, M. Oltscher, D. Weiss, and S. D. Ganichev

Phys. Rev. B 94, 081301 (R) (2016)

Quadrupolar and anisotropy effects on dephasing in two-electron spin qubits in GaAs

T. Botzem, R. P. G. McNeil, J.-M. Mol, D. Schuh, D. Bougeard, and H. Bluhm

Nat. Commun. 7, 11170 (2016)

Towards quantification of the crucial impact of Auger recombination for the efficiency droop in (AlInGa)N quantum well structures

A. Nirschl, M. Binder, M. Schmid, I. Pietzonka, H.-J. Lugauer, R. Zeisel, M. Sabathil, D. Bougeard, and B. Galler

Optics Express 24, 2971 - 2980 (2016)

Epitaxial Growth of Room-Temperature Ferromagnetic MnAs Segments on GaAs Nanowires via Sequential Crystallization

J. Hubmann, B. Bauer, H. S. Körner, S. Furthmeier, M. Buchner, G. Bayreuther, F. Dirnberger, D. Schuh, C. H. Back, J. Zweck, E. Reiger, and Dominique Bougeard

Nano Lett. 16, 900 - 905 (2016)

Coherent cyclotron motion beyond Kohn's theorem

T. Maag, A. Bayer, S. Baierl, M. Hohenleutner, T. Korn, C. Schüller, D. Schuh, D. Bougeard, C. Lange, R. Huber, M. Mootz, J. E. Sipe, S. W. Koch, and M. Kira

Nat. Phys. 12, 119 - 123 (2016)

2015   

Magnetooptical study of Zeeman effect in Mn modulation-doped InAs/InGaAs/InAlAs quantum well structures

Ya. V. Terent'ev, S. N. Danilov, H. Plank, J. Loher, D. Schuh, D. Bougeard, D. Weiss, M. V. Durnev, S. A. Tarasenko, I. V. Rozhansky, S. V. Ivanov, D. R. Yakovlev, and S. D. Ganichev

J. Appl. Phys. 118, 113906 (2015)

Transport and capture properties of Auger-generated high-energy carriers in (AlInGa)N quantum well structures

A. Nirschl, M. Binder, M. Schmid, M. M. Karow, I. Pietzonka, H.-J. Lugauer, R. Zeisel, M. Sabathil, D. Bougeard, and B. Galler

J. Appl. Phys. 118, 033103 (2015)

In-plane tunneling anisotropic magnetoresistance in (Ga,Mn)As/GaAs Esaki diodes in the regime of the excess current

J. Shiogai, M. Ciorga, M. Utz, D. Schuh, M. Kohda, D. Bougeard, T. Nojima, D. Weiss, and J. Nitta

Appl. Phys. Lett. 106, 262402 (2015)

Emergence of spin-orbit fields in magnetotransport of quasi-two-dimensional iron on gallium arsenide

T. Hupfauer, A. Matos-Abiague, M. Gmitra, F. Schiller, J. Loher, D. Bougeard, C. H. Back, J. Fabian, and D. Weiss

Nat. Commun. 6, 7374 (2015)

Double-island Coulomb blockade in (Ga,Mn)As nanoconstrictions

S. Geißler, S. Pfaller, M. Utz, D. Bougeard, A. Donarini, M. Grifoni, and D. Weiss

Phys. Rev. B 91, 195432 (2015)

Commensurability oscillations in a lateral superlattice with broken inversion symmetry

M. Staab, M. Matuschek , P. Pereyra, D. Schuh, D. Bougeard, R. R. Gerhardts, and D. Weiss

New J. Phys. 17, 043035 (2015)

Shot Noise Induced by Nonequilibrium Spin Accumulation

T. Arakawa, J. Shiogai, M. Ciorga, M. Utz, D. Schuh, M. Kohda, J. Nitta, D. Bougeard, D. Weiss, T. Ono, and K. Kobayashi

Phys. Rev. Lett. 114, 016601 (2015)

Surface properties of monolithic zirconia after dental adjustment treatments and in vitro wear simulation

V. Preis, M. Schmalzbauer, D. Bougeard, S. Schneider-Feyrer, M. Rosentritt

J. Dentistry 43, 133 - 139 (2015)

2014

Long exciton lifetimes in stacking-fault-free wurtztite GaAs nanowires

S. Furthmeier, F. Dirnberger, J. Hubmann, B. Bauer, T. Korn, C. Schüller, J. Zweck, E. Reiger, and D. Bougeard

Appl. Phys. Lett. 105, 222109 (2014)

Extremely Nonperturbative Nonlinearities in GaAs Driven by Atomically Strong Terahertz Fields in Gold Metamaterials

C. Lange, T. Maag, M. Hohenleutner, S. Baierl, O. Schubert, E. R. J. Edwards, D. Bougeard, G. Woltersdorf, and R. Huber

Phys. Rev. Lett. 113, 227401 (2014)

Electrical Spin Injection into High Mobility 2D Systems

M. Oltscher, M. Ciorga, M. Utz, D. Schuh, D. Bougeard, and D. Weiss

Phys. Rev. Lett. 113, 236602 (2014)

Hole-spin dynamics and hole g-factor anisotropy in coupled quantum well systems

C. Gradl, M. Kempf, D. Schuh, D. Bougeard, R. Winkler, C. Schüller, and T. Korn

Phys. Rev. B 90, 165439 (2014)

Cubic Rashba Spin-Orbit Interaction of a Two-Dimensional Hole Gas in a Strained-Ge/SiGe Quantum Well

R. Moriya, K. Sawano, Y. Hoshi, S. Masubuchi, Y. Shiraki, A. Wild, C. Neumann, G. Abstreiter, D. Bougeard, T. Koga, and T. Machida

Phys. Rev. Lett. 113, 086601 (2014)

Direct detection of spontaneous polarization in wurtzite GaAs nanowires

B. Bauer, J. Hubmann, M. Lohr, E. Reiger, D. Bougeard, and J. Zweck

Appl. Phys. Lett. 104, 211902 (2014)

Experimental investigation of the optical spin-selection rules in bulk Si and Ge/Si quantum dots

N. Sircar and D. Bougeard

Phys. Rev. B 89, 041301(R) (2014)

Magneto-photoluminescence of InAs/InGaAs/InAlAs quantum well structures

Ya. V. Terent'ev, S. N. Danilov, J. Loher, D. Schuh, D. Bougeard, D. Weiss, M. V. Durnev, S. A. Tarasenko, M. S. Mukhin, S. V. Ivanov, and S. Ganichev

Appl. Phys. Lett. 104, 101111 (2014)

Giant enhancement of spin detection sensitivity in (Ga,Mn)As/GaAs Esaki diodes

J. Shiogai, M. Ciorga, M. Utz, D. Schuh, M. Kohda, D. Bougeard, T. Nojima, J. Nitta, and D. Weiss

Phys. Rev. B 89, 081307(R) 2014

Temperature dependence of ion-beam mixing in crystalline and amorphous germanium isotope multilayer structures

M. Radek, H. Bracht, M. Posselt, B. Liedke, B. Schmidt, and D. Bougeard

J. Appl. Phys. 115, 023506 (2014)

Quantitative modeling of the temperature-dependent internal quantum efficiency in InGaN light emitting diodes

A. Nirschl, A. Gomez-Iglesias, M. Sabathil, G. Hartung, J. Off, and D. Bougeard

Phys. Stat. Sol. A 211, 2509 - 2513 (2014) 

All-electrical detection of spin Hall effect in semiconductors

M. Ehlert, C. Song, M. Ciorga, T. Hupfauer, J. Shiogai, M. Utz, D. Schuh, D. Bougeard, and D. Weiss

Phys. Stat. Sol. B 251 (9), 1725-1735 (2014)

2013

Effect of contact geometry on spin-transport signals in nonlocal (Ga,Mn)As/GaAs devices

M. Ciorga, M. Utz, D. Schuh, D. Bougeard, and D. Weiss

Phys. Rev. B 88, 155308 (2013)

Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence

M. Binder, A. Nirschl, R. Zeisel, T. Hager, H.-J. Lugauer, M. Sabathil, D. Bougeard, J. Wagner, and B. Galler

Appl. Phys. Lett. 103, 071108 (2013)

Laterally self-ordered silicon-germanium islands with optimized confinement properties

T. Zabel, N. Sircar, N. Hauke, J. Zweck, M. Döblinger, M. Kaniber, J. J. Finley, G. Abstreiter, Y. Arakawa, and D. Bougeard

Appl. Phys. Lett. 103, 063105 (2013)

Demonstration of the spin solar cell and spin photodiode effect

B. Endres, M. Ciorga, M. Schmid, M. Utz, D. Bougeard, D. Weiss, G. Bayreuther, and C. Back

Nat. Commun. 4, 2068 (2013)

Radiation-enhanced self- and boron diffusion in germanium

S. Schneider, H. Bracht, J. N. Klug, J. Lundsgaard Hansen, A. Nylandsted Larsen, D. Bougeard, and E. E. Haller

Phys. Rev. B 87, 115202 (2013)

2012

Few electron double quantum dot in an isotopically purified 28Si quantum well

A. Wild, J. Kierig, J. Sailer, J. W. Ager, E. E. Haller, G. Abstreiter, S. Ludwig, and D. Bougeard

Appl. Phys. Lett. 100, 143110 (2012)

Growth of ultrathin epitaxial Fe/MgO spin injector on (001) (Ga, Mn)As

P. Torelli, M. Sperl, R. Ciancio, J. Fujii, C. Rinaldi, m. Cantoni, R. Bertacco, M. Utz, D. Bougeard, M. Soda, E. Carlino, G. Rossi, C. H. Back, and G. Panaccione

Nanotechnology 23, 465202 (2012)

All-electrical measurements of direct spin Hall effect in GaAs with Esaki diode electrodes

M. Ehlert, C. Song, M. Ciorga, M. Utz, D. Schuh, D. Bougeard, and D. Weiss

Phys. Rev. B 86, 205204 (2012)

A three-dimensional silicon photonic crystal nanocavity with enhanced emission from embedded germanium islands

N. Hauke, A. Tandaechanurat, T. Zabel, T. Reichert, H. Takagi, M. Kaniber, S. Iwamoto, D. Bougeard, J. J. Finley, G. Abstreiter, and Y. Arakawa

New J. Phys. 14, 083035 (2012)

Transition from Au to pseudo-Ga catalyzed growth mode observed in GaAs nanowires grown by molecular beam epitaxy

M. Soda, A. Rudolph, D. Schuh, J. Zweck, D. Bougeard, and E. Reiger

Phys. Rev. B 85, 245450 (2012)

Reorientation transition of the magnetic proximity polarization in Fe/(Ga, Mn)As bilayers

M. Sperl, P. Torelli, F. Eigenmann, M. Soda, S. Poleysa, M. Utz, D. Bougeard, H. Ebert, G. Panaccione, and C. H. Back

Phys. Rev. B 85, 184428 (2012)

Nonuniform current and spin accumulation in a 1 µm thick n-GaAs channel

B. Endres, M. Ciorga, R. Wagner, S. Ringer, M. Utz, D. Bougeard, D. Weiss, C. H. Back, and G. Bayreuther

Appl. Phys. Lett. 100, 092405 (2012)

2011

Ion-beam mixing in crystalline and amorphous germanium isotope multilayers

H. Bracht, M. Rade, R. Kube, S. Knebel, M. Posselt, B. Schmidt, E. E. Haller, and D. Bougeard

J. Appl. Phys. 110, 093502 (2011)

Proximity Induced Enhancement of the Curie Temperature in Hybrid Spin Injections Device

C. Song, M. Sperl, M. Utz, M. Ciorga, G. Woltersdorf, D. Schuh, D. Bougeard, C. H. Back, and D. Weiss

Phys. Rev. Lett. 107, 056601 (2011)

Correlation between emission intensity of self-assembled germanium islands and quality factor of silicon photonic crystal nanoactivities

N. Hauke, S. Lichtmannecker, T. Zabel, F. P. Laussy, A. Laucht, M. Kaniber, D. Bougeard, G. Abstreiter, J. J. Finley, and Y. Arakawa

Phys. Rev. B 84, 085320 (2011)     

Interplay between the electrical transport properties of GeMn thin films and Ge substrates

N. Sircar, S. Ahlers, C. Majer, G. Abstreiter, and D. Bougeard

Phys. Rev. B 83, 125306 (2011)

2010

Quantum Hall resistance overshoot in two-dimensional (2D) electron gases: theory and experiment

J. Sailer, A. Wild, V. Lang, A. Siddiki, and D. Bougeard

New J. Phys. 12, 113033 (2010)

Electrostatically defined quantum dots in a Si/SiGe heterostructure

A. Wild, J. Sailer, J. Nützel, G. Abstreiter, S. Ludwig, and D. Bougeard

New J. Phys. 12, 113019 (2010)

Enhanced photoluminescence emission from two-dimensional silicon photonic crystal nanocavities

N. Hauke, T. Zabel, K. Mueller, M. Kaniber, A. Laucht, D. Bougeard, G. Abstreiter, J. J. Finley, and Y. Arakawa

New J. Phys. 12, 053005 (2010)

2009

Ge(1-x)Mnx Clusters: Central Structural and Magnetic Building Blocks of Nanoscale Wire-Like Self-Assembly in a Magnetic Semiconductor

D. Bougeard, N. Sircar, S. Ahlers, V. Lang, G. Abstreiter, A. Trampert, J. M. LeBeau, S. Stemmer, D. W. Saxey, and A. Cerezo

Nano Lett. 9, 3743 (2009)

Interstitial-Mediated Diffusion in Germanium under Proton Irradiation

H. Bracht, S. Schneider, J. N. Klug, C. Y. Liao, J.L. Hansen, E. E. Haller, A. N. Larsen, D. Bougeard, M. Posselt, and C. Wundisch

Phys. Rev. Lett. 103, 255501 (2009)

Comparison of the magnetic properties of GeMn thin films through Mn L-edge x-ray absorption

S. Ahlers, P. R. Stone, N. Sircar, E. Arenholz, O. D. Dubon, and D. Bougeard

Appl. Phys. Lett. 95, 151911 (2009)

Self-assembled Mn5Ge3 nanomagnets close to the surface and deep inside a
Ge(1-x)Mnx epilayer

R. T. Lechner, V. Holy, S. Ahlers, D. Bougeard, J. Stangl, A. Trampert, A. Navarro-Quezada, and G. Bauer

Appl. Phys. Lett. 95, 023102 (2009)

A Schottky top-gated two-dimensional electron system in a nuclear spin free Si/SiGe heterostructure

J. Sailer, V. Lang, G. Abstreiter, G. Tsuchiys, K. M. Itoh, J. W. Ager, E.E. Haller, D. Kupidura, D. Harbusch, S. Ludwig, and D. Bougeard

Phys. Stat. Sol. RRL 3 , 61 (2009)

2008

Diffusive x-ray scattering from inclusions in ferromagnetic Ge(1-x)Mnx layers

V. Holy, R. T. Lechner, S. Ahlers, L. Horyk, T. H. Metzger, A. Navarro-Quezada, A. Trampert, D. Bougeard, and G. Bauer

Phys. Rev. B 78, 144401 (2008)

Self-diffusion in germanium isotope multilayers at low temperatures

E. Hüger, U. Tietze, D. Lott, H. Bracht, D. Bougeard, E. E. Haller, and H. Schmidt

Appl. Phys. Lett. 93, 162104 (2008)

All-electric detection of the polarization state of terahertz radiation

S. D. Ganichev, W. Weber, J. Kiermaier, S. N. Danilov, P. Olbrich, D. Schuh, W. Wegscheider, D. Bougeard, G. Abstreiter, and W. Prettl

J. Appl. Phys. 103, 114504 (2008)

2007

Subnanosecond ellipticity detector for laser radiation

S. D. Ganichev, J. Kiermaier, W. Weber, S.N. Danilov, P. Olbrich, D. Schuh, C. Gerl, W. Wegscheider, W. Prettl, D. Bougeard, and G. Abstreiter

Appl. Phys. Lett. 91, 091101 (2007)

2006

Clustering in a Precipitate-Free GeMn Magnetic Semiconductor

D. Bougeard, S. Ahlers, A. Trampert, N. Sircar, and G. Abstreiter

Phys. Rev. Lett. 97, 237202 (2006)

Magnetic and structural properties of GexMn(1-x) films: Precipitation of intermetallic nanomagnets

S. Ahlers, D. Bougeard, N. Sircar, G. Abstreiter, A. Trampert, M. Opel, and R. Gross

Phys. Rev. B 74, 214411 (2006)

Ferromagnetic GeMn nanostructures

S. Ahlers, D. Bougeard, H. Riedl, G. Abstreiter, A. Trampert, W. Kipferl, K. Sperl, A. Bergmaier, and G. Dollinger

Physica E 32, 422 (2006)

2005

Depth profile of strain and composition in Si/Ge dot multilayers by microscopic phonon Raman spectroscopy

P. H. Tan, D. Bougeard, G. Abstreiter, and K. Brunner

J. Appl. Phys. 98, 113517 (2005)

2004

Resonant Raman scattering of discrete hole states in self-assembled Si/Ge quantum dots

D. Bougeard, P. H. Tan, M. Sabathil, P. Vogl, G. Abstreiter, and K. Brunner

Physica E 21, 312 (2004)

Raman scattering of folded acoustic phonons in self-assembled Si/Ge dot superlattices

P. H. Tan, D. Bougeard, G. Abstreiter, and K. Brunner

Appl. Phys. Lett. 84, 2632 (2004)

2003

Raman characterization of strain and composition in small-sized self-assembled Si/Ge dots

P. H. Tan, K. Brunner, D. Bougeard, and G. Abstreiter

Physical Review B 68, 125302 (2003)

Intraband photoresponse of SiGe quantum dot/ quantum well structures

D. Bougeard, K. Brunner, and G. Abstreiter

Physica E 16, 609 (2003)

2002

Novel Si/Ge quantum dot midinfrared photodetector structures with in-plane transport

D. Bougeard, K. Brunner, and G. Abstreiter

Inst. Phys. Conf. Ser. 170, 589 (2002)

Ge quantum dots in Si: self-assembly, stacking and level spectroscopy

K. Brunner, M. Herbst, D. Bougeard, C. Miesner, T. Asperger, C. Schramm, and G. Abstreiter

Physica E 13, 1018 (2002)

A quantum dot infrared photodetector with lateral carrier transport

L. Chu, A. Zrenner, D. Bougeard, M. Bichler, and G. Abstreiter

Physica E 13, 301 (2002)


  1. Faculty of Physics

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