We explored the effects of electric fields and the separation of individual layers on the spin-valley physics of van-der-Waals MoSe2/WSe2 heterobilayers using advanced first-principles methods. Within our recent work, we put a special focus on dipolar (interlayer) excitons – the exciton-forming electrons and holes are thereby localized in different layers –, for which multilayered van-der-Waals heterostructures provide a suitable platform to emerge.
This work has been published in Nanomaterials.
By means of first-principles calculations, we studied the impact of twisting and gating on the electronic properties of MoSe2/CrI3 and WSe2/CrI3 van-der-Waals heterostructures. Fitting the ab-initio bandstructures to a well-established model Hamiltonian, we demonstrate that twisting and gating provide important control knobs to strongly tune the valley splitting.
This work has been published in Physical Review B.
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